A2T21S161W12Sr3 1 rf device data nxp semiconductors rf power ldmos transistor n--channel enhancement--mode lateral mosfet this 38 w rf power ldmos transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 mhz. 2100 mhz ? typical single--carrier w--cdma performance: v dd =28vdc, i dq = 600 ma, p out = 38 w avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) irl (db) 2110 mhz 18.7 34.2 6.8 ?32.3 ?21 2140 mhz 18.9 34.0 6.8 ?32.2 ?18 2170 mhz 19.1 33.8 6.6 ?32.3 ?14 2200 mhz 19.2 34.0 6.5 ?32.3 ?12 features ? designed for wide instantaneous bandwidth applications ? greater negative gate--source voltage r ange for improved class c operation ? able to withstand extremely high output vswr and broadband operating conditions ? optimized for doherty applications document number: A2T21S161W12S rev. 0, 07/2018 nxp semiconductors technical data 2110?2200 mhz, 38 w avg., 28 v airfast rf power ldmos transistor A2T21S161W12Sr3 ni--780s--2l2l figure 1. pin connections (top view) rf in /v gs vbw vbw 4 2 13 rf out /v ds ? 2018 nxp b.v.
2 rf device data nxp semiconductors A2T21S161W12Sr3 table 1. maximum ratings rating symbol value unit drain--source voltage v dss ?0.5, +65 vdc gate--source voltage v gs ?6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg ?65 to +150 ? c case operating temperature range t c ?40 to +150 ? c operating junction temperature range (1,2) t j ?40 to +225 ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 71 ? c, 38 w cw, 28 vdc, i dq = 600 ma, 2140 mhz r ? jc 0.33 ? c/w table 3. esd protection characteristics test methodology class human body model (per js--001--2017) 2 charge device model (per js--002--2014) c3 table 4. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =32vdc,v gs =0vdc) i dss ? ? 5 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 ? adc on characteristics gate threshold voltage (v ds =10vdc,i d = 151 ? adc) v gs(th) 1.4 1.8 2.2 vdc gate quiescent voltage (v dd =28vdc,i d = 600 madc, measured in functional test) v gs(q) 2.1 2.6 2.9 vdc drain--source on--voltage (v gs =10vdc,i d =1.5adc) v ds(on) 0.1 0.2 0.3 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.nxp.com/rf/calculators . 3. refer to an1955 , thermal measurement methodology of rf power amplifiers. go to http://www.nxp.com/rf and search for an1955. (continued)
A2T21S161W12Sr3 3 rf device data nxp semiconductors table 4. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (1) (in nxp test fixture, 50 ohm system) v dd =28vdc,i dq = 600 ma, p out = 38 w avg., f = 2170 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 17.4 19.1 20.4 db drain efficiency ? d 31.4 33.8 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 5.5 6.6 ? db adjacent channel power ratio acpr ? ?32.3 ?27.7 dbc input return loss irl ? ?14 ?7 db load mismatch (in nxp test fixture, 50 ohm system) i dq = 600 ma, f = 2140 mhz vswr 10:1 at 32 vdc, 219 w cw output power (3 db input overdrive from 161 w cw rated power) no device degradation typical performance (in nxp test fixture, 50 ohm system) v dd =28vdc,i dq = 600 ma, 2110?2200 mhz bandwidth p out @ 1 db compression point, cw p1db ? 158 ? w am/pm (maximum value measured at the p3db compression point across the 2110?2200 mhz bandwidth) ? ? ?17 ? ? vbw resonance point (imd third order intermodulation inflection point) vbw res ? 140 ? mhz gain flatness in 90 mhz bandwidth @ p out =38wavg. g f ? 0.5 ? db gain variation over temperature (?40 ? cto+85 ? c) ? g ? 0.013 ? db/ ? c output power variation over temperature (?40 ? cto+85 ? c) ? p1db ? 0.001 ? db/ ? c table 5. ordering information device tape and reel information package A2T21S161W12Sr3 r3 suffix = 250 units, 44 mm tape width, 13--inch reel ni--780s--2l2l 1. part internally matched both on input and output.
4 rf device data nxp semiconductors A2T21S161W12Sr3 figure 2. A2T21S161W12Sr3 test circuit component layout c17 c4 c5 c8 r2 c3 c6 c12 c11 c13 c14 c1 r1 c9 c18 cut out area d104789 c2 c7 A2T21S161W12S rev. 1 c10 c15 c16 v gg v gg v dd v dd table 6. A2T21S161W12Sr3 test circui t component designations and values part description part number manufacturer c1, c2, c3, c4, c5, c6 10 ? f chip capacitor c5750x7s2a106m230kb tdk c7, c8, c10, c11, c14, c17 9.1 pf chip capacitor atc100b9r1ct500xt atc c9 0.8 pf chip capacitor atc100b0r8bt500xt atc c12 0.9 pf chip capacitor atc100b0r9bt500xt atc c13, c18 0.1 pf chip capacitor atc600f0r1bt250xt atc c15 470 ? f, 63 v electrolytic capacitor mcgpr63v477m13x26 multicomp c16 1.1 pf chip capacitor atc100b1r1bt500xt atc r1, r2 3 ? , 1/4 w chip resistor crcw12063r00jnea vishay pcb rogers ro4350b, 0.020 ? , ? r =3.66 d104789 mtl
A2T21S161W12Sr3 5 rf device data nxp semiconductors package dimensions
6 rf device data nxp semiconductors A2T21S161W12Sr3
A2T21S161W12Sr3 7 rf device data nxp semiconductors product documentation, software and tools refer to the following resources to aid your design process. application notes ? an1908: solder reflow attach method for high power rf devices in air cavity packages ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? .s2p file development tools ? printed circuit boards to download resources specific to a given part number: 1. go to http://www .nxp.com/rf 2. search by part number 3. click part number link 4. choose the desired resource from the drop down menu revision history the following table summarizes revisions to this document. revision date description 0 july 2018 ? initial release of data sheet
8 rf device data nxp semiconductors A2T21S161W12Sr3 information in this document is provided solely to enable system and software implementers to use nxp products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. nxp reserves the right to make changes without further notice to any products herein. nxp makes no warranty, repr esentation, or guarantee r egarding the sui tability of its products for any particular purpose, nor does nxp assume any li ability arisi ng out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or i ncidental damages. ?typical? parameters that may be provided in nxp data sheets and/ or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. nxp does not convey any license under its patent rights nor the rights of others. nxp sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/ salestermsandconditions . nxp, the nxp logo and airfast are trademarks of nxp b.v. all other product or service names are the property of their respective owners. e 2018 nxp b.v. how to reach us: home page: nxp.com web support: nxp.com/support document number: A2T21S161W12S rev. 0, 07/2018
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